Lem: HXN 50-P, Tamura: L18P050D15-OP, Zhongxu: HDC-50HX

	Lem: HXN 50-P （29March2013/version 1）	Tamura: L18P050D15-OP	Zhongxu: HDC-50HX
Primary nominal rms current	Primary nominal current rms IPN 50 A	Primary norminal current If 50 A	Primary nominal current rms IPN 50 A
Primary current measuring range	Primary current measuring range IPM ±150 A	Saturation current If max If×3*1	Primary current measuring range IP 0~±150 A DC
Measuring resistance
Load resistance	Load resistance RL ≥ 10 KΩ	RL 10 KΩ	Load resistance RL 10 KΩ
Rated output voltage	Output voltage(Analog) Vout ±4 V @ IPN, RL=10 KΩ, TA=25℃	Rated output voltage Vo 4 V ± 0.050 V (at If)	Output voltage(Analog) VSN ±4 V±1% at IPN = F.S
Conversion ratio
Supply voltage	Supply voltage (± 5 %) 1) UC ±15 V	Power supply voltage Vcc ± 12V(± 5%)~ ± 15V(± 5%)	Supply voltage Vcc ±15 V DC ±5%
Current consumption	Current consumption IC <±15 mA	Consumption current Icc ±14 mA(type), ≦±18mA
Accuracy	Accuracy @ IPN, TA=25℃(excluding offset) X <±1 % of IPN	50 mV
Linearity error	Linearity error(0…±IPN) EL <±1 % of IPN	Output linearity (without offset) εL ≦±1 % (at If)	Linearity error ρ within ±1 % of ISN at IPN =F.S
Electrical offset voltage	Electrical offset voltage @T=25℃ VOE <±40 mV	Offset voltage*2 Vof <±50 mV @If=0 A,TA=25℃	Electrical offset voltage Vo Within ±0.04 V at IPN = 0
Magnetic offset voltage	Hysteresis offset voltage @IP=0, after an excursion of 1 x IPN VOH <±15 mV	Hysteresis error Voh ≦40 mV (at If = 0A → If → 0A)
Temperature variation of Vo	Temperature coefficient of VOE TCVOE <±1.5 mV/K	Thermal drift of offset TCVof ≦±1.5 mV/°C	Thermal drift of offset VoT <±1 mv/°C Type
Temperature coefficient of Vout	Temperature coefficient of Vout(% of reading) TCVout ±0.1 %/K	Thermal drift of gain TCVo ≦± 0.1 %/°C (Without TcVof)
Reaction time
Step response time	Step response time to 90％ of IPN tr ≤ 3µs	di/dt Response time tr ≦ 5μs (di/dt = If /μs)	Step response time Trr 3 us
di/dt accurately followed
Frequency bandwidth	Frequency bandwidth(- 3 dB) 2) BW 50 kHz （Small signal only to avoid excessive heating of the magnetic cores.）	50 kHz	Frequency bandwidth f DC......50KHZ
Rms voltage for AC insulation	Rms voltage for AC insulation test, 50 Hz, 1 min Ud > 3 kV	Insulation voltage Vd AC 3000V for 1 minute(Sensing current 0.5mA)Primary ⇔ Secondary	Insulation voltage 2 KV AC with 50 or 60Hz×1 minute
Insulation resistance		Insulation resistance RIS ≧ 500 MΩ (at DC 500 V)Primary ⇔ Secondary	Insulation resistance 500 MΩ Min at 500 V DC
Primary wire	Primary wire φ bus-bar 1.2 × 6.3	Primary wire φ bus-bar 1.0 × 6.3	Primary wire φ bus-bar 1.0 × 6.3
Ambient operating temperature	- 25 .. + 85 °C	ー 30°C〜+ 80°C	-25°C to +85°C
Ambient storage temperature	- 25 .. + 85 °C	ー 40°C〜+ 85°C	-40°C to +90°C
Output internal resistance	Output internal resistance Rout <50 Ω	<50 Ω
Mass	8
Standards	EN 50178:1997
Certificate	CE,Rohs,Antistatic	US,CE,Rohs
Note	Notes: 1) Also operate at UC = ± 12 V, with measuring range reduced to ± 2.5 x IPN 2) Small signal only to avoid excessive heating of the magnetic cores.	1 Also operate at Vcc = ± 12V power supples, measuring range reduced to 2.5 x If. 2 Offset voltage value is after removal of core hysteresis. * Please refer to the another sheet about conditions of UL Recognition.
Additional Parameters :1	Isolation characteristics Ud: Rms voltage for AC insulation test, 50 Hz, 1 min > 3 kV ÛW: Impulse withstand voltage 1.2/50 μs ≥ 6 kV Ue: Partial discharge extinction voltage rms @ 10 pC ≥ 1 kV dCp: Creepage distance Min 5.5 mm dCI: Clearance Min 5.5 mm CTI: Comparative Tracking Index (group I) Min 600
Additional Parameters :2	Applications examples According to EN 50178 and IEC 61010-1 standards and following conditions: ● Over voltage category OV 3 ● Pollution degree PD2 ● Non-uniformfield dCp, dCI, ÛW Basic insulation Reinforced insulation EN 50178 Rated insulation voltage 600 V 300 V IEC 61010-1 Nominal voltage 600 V 150 V

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